1 / 1 0 n ??? n - channel mosfet j cs 15 n 6 0 h order codes ? marking ? package halogen free ? packaging device weight jcs 1 5 n 6 0c h - o - c - n - b jcs 15 n 6 0c h to - 220c no tube 2.15 g(typ) jcs 15 n 6 0f h - o - f - n - b jcs 15 n 6 0f h to - 220 m f n o tube 2.20 g(typ) jcs 1 5 n 6 0c h - r - c - n - b jcs 15 n 6 0c h to - 220c yes tube 2.15 g(typ) jcs 15 n 6 0f h - r - f - n - b jcs 15 n 6 0f h to - 220mf yes tube 2.20 g(typ) ? package ? main characteristics i d 15 a v dss 6 00 v rdson @vgs=10v 0. 52 ? qg 36.0 nc ? ? ??? ? ? ups ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ups ? ? ? ? c rss ( ? 2 3 pf ) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typica l 2 3 pf ) ? fast switching ? 100% avalanche tested ? im proved dv/dt capa bility ? rohs product ? order message r
jcs 15 n 6 0 h 20 1 5 07c 2 / 1 0 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction tem perature ? parameter symbol ? value unit jcs 15 n 6 0c h jcs 15 n 6 0f h ???? dss 6 00 6 00 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 60 60 * a ??? gss 30 v ? ? 2 single pulsed avalanche en ergy as 245 mj ? ? 1 avalanche current ar 15 a ?? ? 1 ar 23.9 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs 15 n 6 0 h 20 1 5 07c 3 / 1 0 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature co efficient bv dss / t j i d =250 a, referenced to 25 - 0. 79 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3 .0 - 5.0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 7.5 a - 0. 4 5 0. 52 ? forward transconductance g fs v ds = 40v, i d = 7.5 a note 4 - 19.8 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 2270 3000 pf output capacitance c oss - 300 405 pf reverse transfer cap acitance c rss - 23 37 pf r
jcs 15 n 6 0 h 20 1 5 07c 4 / 1 0 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 25 0v,i d = 15 a,r g =25? note 4 5 - 50 101 ns ? turn - on rise time t r - 78 162 ns ?? turn - off delay time t d (off) - 120 261 ns ?? turn - off fall time t f - 66 128 ns ? total gate charge q g v ds = 48 0v , i d = 15 a v gs =10v note 4 5 - 36.0 60.0 nc ?? gate - source charge q gs - 9. 0 - nc ?? gate - drain charge q gd - 16 .0 - nc ????? drain - source di ode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 15 a maximum pulsed drain - source diode forward current i sm - - 60 a ? drain - source diode forward voltage v sd v gs =0v, i s = 15 a - - 1.4 v ?? reverse recovery time t rr v gs =0v, i s = 15 a di f /dt=100a/ s (note 4) - 600 - ns ? reverse recovery charge q rr - 7.20 - c ? parameter symbol max unit jcs 15 n 6 0c h jcs 15 n 6 0f h ??? therm al resistance, junction to case r th(j - c) 0. 51 2.36 /w ? thermal resistance, junction to ambient r th(j - a) 62.5 62.5 /w ? ? 1 ? 2 l = 2.0 mh , i as = 15 a, v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 15 a,di/dt 2 00a / s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 2.0 mh, i as = 15 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 15 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 15 n 6 0 h 20 1 5 07c 5 / 1 0 electrical characteristics (curves) on - region characteristics transfer characteristics on - resis tance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics ga te charge characteristics r 1 10 1 10 100 v gs top 15v 10v 9v 8v 7v 6.5v 6v 5.5v bottom 5v notes: 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 2 3 4 5 6 7 8 9 10 0.1 1 10 notes: 1.250s pulse test 2.v ds =20v 25 i d [a] v gs [v] 150 0 2 4 6 8 10 12 14 16 18 20 22 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 note:t j =25 v gs =10v v gs =20v r ds (on) [ ] i d [a] 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 notes: 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 -1 10 0 10 1 10 100 1000 10000 coss ciss crss *note: 1. v gs =0v 2. f=1 mhz c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds drain-source voltage [v] 0 2 4 6 8 10 12 0 10 20 30 40 *note:id=15a v ds =480v v ds =380v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v]
jcs 15 n 6 0 h 20 1 5 07c 6 / 1 0 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum drain current vs. case temperature maximum safe operating area for jcs 15 n 6 0 f h r 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c =25 2 t j =150 3 single pulse 10s 1ms 100s 10ms 100ms dc i d drain current [a] v ds drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 i d drain current [a] t c case temperature [ ] -75 -50 -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 notes: 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 notes: 1. v gs =10v 2. i d =7.5a r d (on) (normalized) t j [ ]
jcs 15 n 6 0 h 20 1 5 07c 7 / 1 0 electrical characteristics (curves) transient thermal response curve for jcs 15 n 6 0 f h transient thermal response curve for jcs15n60ch r 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 t 2 t 1 d=0.5 0.2 0.1 0.05 0.02 z jc (t) thermal response t 1 square wave pulse duration [sec] single pulse 0.01 notes: 1 z jc (t)=3.5 2 duty factor, d=t 1 /t 2 3 t jm -t c =p dm * z jc (t) p dm 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 t 2 t 1 d=0.5 0.2 0.1 0.05 0.02 z jc (t) thermal response t 1 square wave pulse duration [sec] single pulse 0.01 notes: 1 z jc (t)=0.7 2 duty factor, d=t 1 /t 2 3 t jm -t c =p dm * z jc (t) p dm
jcs 15 n 6 0 h 20 1 5 07c 8 / 1 0 ? package mechanical data to - 2 20 c u nit mm r
jcs 15 n 6 0 h 20 1 5 07c 9 / 1 0 ? package mechanical data to - 2 20 mf u nit mm r
jcs 15 n 6 0 h 20 1 5 07c 10 / 1 0 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our pr oduct, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specif ication sheet and is subject to change without prior notice. ?? ?? ???? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3 0 9 8 /3 0 9 9 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 - 3098/3099 fax: 86 - 432 - 6 4671533 r
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